Open AccessDepth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur
Author(s) -
Filippo Fabbri,
Matthew J. Smith,
Daniel Recht,
Michael J. Aziz,
Silvija Gradečak,
G. Salviati
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4788743
Subject(s) - cathodoluminescence , luminescence , supersaturation , spectroscopy , silicon , materials science , analytical chemistry (journal) , quenching (fluorescence) , sulfur , chemistry , optoelectronics , optics , fluorescence , physics , metallurgy , organic chemistry , quantum mechanics , chromatography
We investigate the luminescence of Si supersaturated with S (Si:S) using depth-resolved cathodoluminescence spectroscopy and secondary ion mass spectroscopy as the S concentration is varied over 2 orders of magnitude (10[superscript 18]–10[superscript 20] cm[superscript −3]). In single-crystalline supersaturated Si:S, we identify strong luminescence from intra-gap states related to Si self-interstitials and a S-related luminescence at 0.85 eV, both of which show a strong dependence on S concentration in the supersaturated regime. Sufficiently high S concentrations in Si (>10[superscript 20] cm[superscript −3]) result in complete luminescence quenching, which we propose is a consequence of the overlapping of the defect band and conduction band.Chesonis Family FoundationUnited States. Army Research Office (Grant W911NF-12-1-0196)National Science Foundation (U.S.) (United States. Dept. of Energy ERC–QESST EEC-1041895)United States. Dept. of Defense (National Defense Science and Engineering Graduate Fellowship
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