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Charge-induced series resistance switching in GaAs solar cells
Author(s) -
P. A. Folkes,
K. Olver
Publication year - 2012
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4774033
Subject(s) - equivalent series resistance , materials science , hysteresis , optoelectronics , voltage , semiconductor , series (stratigraphy) , solar cell , current (fluid) , contact resistance , layer (electronics) , electrical engineering , condensed matter physics , nanotechnology , physics , engineering , paleontology , biology
We report the observation of an abrupt decrease in the series resistance and a concurrent steep increase in the dark current at a threshold voltage, and subsequent hysteresis in the current-voltage characteristics of GaAs p-n junction solar cells. Our data suggests that the observed switch in the series resistance can be attributed to a thin insulating layer at the contact / semiconductor interface that contributes a voltage-and-light-dependent component to the solar cell series resistance

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