Diffusion and configuration of Li in ZnO
Author(s) -
Knut Erik Knutsen,
K. M. Johansen,
Pekka T. Neuvonen,
Bengt Svensson,
Andrej Kuznetsov
Publication year - 2013
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4773829
Subject(s) - impurity , thermal diffusivity , diffusion , secondary ion mass spectrometry , drop (telecommunication) , conductivity , chemistry , electric field , analytical chemistry (journal) , electrical resistivity and conductivity , hydrothermal circulation , ion , chemical physics , thermodynamics , chemical engineering , telecommunications , physics , organic chemistry , chromatography , quantum mechanics , computer science , electrical engineering , engineering
Diffusion of Li into ZnO from an “infinite” surface source under oxygen-rich conditions is studied using secondary ion mass spectrometry. The Li concentration-versus-depth profiles exhibit a distinct and sharp drop, which evolves in position with temperature and time. The sharp drop is associated with an efficient conversion from highly mobile Li-interstitials (Lii) to practically immobile Li-substitutionals (LiZn) via a kick-out mechanism. The characteristic concentration level at which Li drops provides a measure of the active donor concentration in the samples at the processing temperature, and gives evidence of residual impurities being responsible for the commonly observed “native” n-type conductivity. These donors are suggested to arise from different impurities, with Al and Si as the prevailing ones in hydrothermal and melt grown material. Further, evidence of electric field effects on Li diffusion profiles is obtained, and they are considered as a main reason for the slow diffusivity obtained in this work (using O-rich conditions) relative to those previously reported in the literature (obtained under Zn-rich conditions).This research was originally published in the Journal of Applied Physics. © AIP Publishin
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