Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure | Zendy

S. Decoster | Zendy; Bernt Johannessen | Zendy; C. J. Glover | Zendy; Stefaan Cottenier | Zendy; T. Bierschenk | Zendy; Hazar A. Salama | Zendy; Felipe Kremer | Zendy; K. Temst | Zendy; A. Vantomme | Zendy; M. C. Ridgway | Zendy

Open Access

Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure

Author(s) -

S. Decoster,

Bernt Johannessen,

C. J. Glover,

Stefaan Cottenier,

T. Bierschenk,

Hazar A. Salama,

Felipe Kremer,

K. Temst,

A. Vantomme,

M. C. Ridgway

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4773185

Subject(s) - extended x ray absorption fine structure , ion implantation , bond length , ion , dopant , materials science , annealing (glass) , lattice (music) , density functional theory , crystallography , analytical chemistry (journal) , atomic physics , crystal structure , doping , chemistry , absorption spectroscopy , computational chemistry , optics , optoelectronics , physics , organic chemistry , chromatography , acoustics , composite material

We acknowledge the support from the Research Foundation Flanders, the epi-team from imec, the KU Leuven GOA 09/06 project, the IUAP program P6/42 and the Australian Research Council. S.C. acknowledges support from OCAS NV by an OCAS-endowed chair at Ghent University.

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