Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001) | Zendy

Cyril Sadia | Zendy; Aleena Maria Laganapan | Zendy; Mae Agatha Tumanguil | Zendy; Elmer Estacio | Zendy; Armando Somintac | Zendy; Arnel Salvador | Zendy; Christopher T. Que | Zendy; Kohji Yamamoto | Zendy; Masahiko Tani | Zendy

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Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

Author(s) -

Cyril Sadia,

Aleena Maria Laganapan,

Mae Agatha Tumanguil,

Elmer Estacio,

Armando Somintac,

Arnel Salvador,

Christopher T. Que,

Kohji Yamamoto,

Masahiko Tani

Publication year - 2012

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4770267

Subject(s) - terahertz radiation , molecular beam epitaxy , materials science , heterojunction , optoelectronics , gallium arsenide , epitaxy , electric field , thin film , substrate (aquarium) , nanotechnology , layer (electronics) , physics , oceanography , quantum mechanics , geology

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

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