Growth analysis of (Ag,Cu)InSe2 thin films via real time spectroscopic ellipsometry | Zendy

Scott Little | Zendy; Vinayak Ranjan | Zendy; R. W. Collins | Zendy; Sylvain Marsillac | Zendy

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Growth analysis of (Ag,Cu)InSe2 thin films via real time spectroscopic ellipsometry

Author(s) -

Scott Little,

Vinayak Ranjan,

R. W. Collins,

Sylvain Marsillac

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4769902

Subject(s) - materials science , ellipsometry , thin film , surface roughness , characterization (materials science) , surface finish , layer (electronics) , dielectric , analytical chemistry (journal) , deposition (geology) , in situ , optics , optoelectronics , nanotechnology , composite material , chemistry , paleontology , physics , chromatography , sediment , biology , organic chemistry

In situ and ex situ characterization methods have been applied to investigate the properties of (Ag,Cu)InSe2 (ACIS) thin films. Data acquired from real time spectroscopic ellipsometry (RTSE) experiments were analyzed to extract the evolution of the nucleating, bulk, and surface roughness layer thicknesses. The evolution of these layer thicknesses suggests a transition from Volmer-Weber to Stranski-Krastanov type behavior when Cu is replaced by Ag. The complex dielectric functions of ACIS at both deposition and room temperature as a function of film composition were also extracted from the RTSE data, enabling parameterization of the alloy optical properties.

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