Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures
Author(s) -
Bin Xia,
Peng Ren,
Azat Sulaev,
Zhengyi Li,
P. Liu,
Zhili Dong,
Lan Wang
Publication year - 2012
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4769894
Subject(s) - magnetoresistance , topological insulator , condensed matter physics , heterojunction , anisotropy , materials science , giant magnetoresistance , physics , magnetic field , quantum mechanics
Topological insulator is composed of an insulating bulk state and time reversal symmetry protected two-dimensional surface states. One of the characteristics of the surface states is the locking between electron momentum and spin orientation. Here, we report a novel in-plane anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures. To explain the novel effect, we propose that the Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructure forms a spin-valve or Giant magnetoresistance device due to spin-momentum locking. The novel in-plane anisotropic magnetoresistance can be explained as a Giant magnetoresistance effect of the Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures
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