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Electron-state engineering of bilayer graphene by ionic molecules
Author(s) -
Nguyen Thanh Cuong,
Minoru Otani,
Susumu Okada
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4769098
Subject(s) - bilayer graphene , ionic bonding , graphene , bilayer , ion , chemical physics , molecule , band gap , dipole , materials science , semiconductor , chemistry , nanotechnology , optoelectronics , membrane , organic chemistry , biochemistry
Based on the first-principles total-energy calculations, we demonstrate the possibility of controlling the band-gap and carrier type of bilayer graphene using ionic molecules. Our calculations suggest that bilayer graphene sandwiched by a pair of cation-anion molecules is a semiconductor with a moderate energy gap of 0.26 eV that is attributable to the strong local dipole field induced by the cation-anion pair. Furthermore, we can control the semiconducting carrier type—intrinsic, p-type, or n-type—of bilayer graphene sandwiched by ionic molecules by changing the cation-anion pair

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