Open AccessOn the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates
Author(s) -
P. Vennéguès,
J.M. Chauveau,
Z. Bougrioua,
Tongtong Zhu,
D. Martin,
N. Grandjean
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4768686
Subject(s) - wurtzite crystal structure , epitaxy , coalescence (physics) , stacking , sapphire , materials science , nucleation , perpendicular , crystallography , transmission electron microscopy , surface energy , condensed matter physics , optoelectronics , chemical physics , composite material , nanotechnology , chemistry , optics , geometry , layer (electronics) , hexagonal crystal system , laser , physics , organic chemistry , mathematics , astrobiology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom