Transient photoreflectance of AlInN/GaN heterostructures | Zendy

S. Marcinkevičius | Zendy; Vytautas Liuolia | Zendy; Daniel Billingsley | Zendy; M. Shatalov | Zendy; J. Yang | Zendy; R. Gaška | Zendy; M. S. Shur | Zendy

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Transient photoreflectance of AlInN/GaN heterostructures

Author(s) -

S. Marcinkevičius,

Vytautas Liuolia,

Daniel Billingsley,

M. Shatalov,

J. Yang,

R. Gaška,

M. S. Shur

Publication year - 2012

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4768670

Subject(s) - photoexcitation , heterojunction , wide bandgap semiconductor , materials science , band gap , optoelectronics , electric field , relaxation (psychology) , condensed matter physics , atomic physics , physics , excited state , psychology , social psychology , quantum mechanics

Time-resolved photoreflectance (PR) in AlInN/GaN heterostructures was applied to study carrier dynamics at energies extending from the uniform AlInN alloy band gap to the band gap of GaN. PR at the AlInN band gap has been found to have subpicosecond decay. Such ultrafast carrier relaxation from the extended to the sub-band edge states implies that the localization sites are small and dense, most probably originating from the In-rich clusters. At energies below the AlInN band gap, a complicated energy dependence of the PR signal is attributed to the properties of the localized states and to the modulation of the interface electric field by photoexcitation.

QC 20130109

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