Open AccessTemperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications
Author(s) -
Igor P. Marko,
Zahida Batool,
K. Hild,
S. R. Jin,
N. Hossain,
T. J. C. Hosea,
J. P. Petropoulos,
Yuhan Zhong,
Pernell Dongmo,
Joshua M. O. Zide,
Stephen J. Sweeney
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4768532
Subject(s) - band gap , infrared , semiconductor , valence band , materials science , optoelectronics , condensed matter physics , valence (chemistry) , wide bandgap semiconductor , chemistry , physics , optics , organic chemistry
Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, E, and spin-orbit splitting, Δ, respectively. The possibility of achieving Δ > E and a reduced temperature (T) dependence for E are significant for suppressing recombination losses and improving performance in mid-infrared photonic devices. We measure E (x, T) and Δ (x, T) in InGa BiAs/InP samples for 0 x 0.039 by various complementary optical spectroscopic techniques. While we find no clear evidence of a decreased dE/dT (≈0.34 ± 0.06 meV/K in all samples) we find Δ > E for x > 3.3-4.3. The predictions of a valence band anti-crossing model agree well with the measurements. © 2012 American Institute of Physics
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