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Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films
Author(s) -
S. R. Sarath Kumar,
Anas Abutaha,
Mohamed Nejib Hedhili,
Husam N. Alshareef
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4767840
Subject(s) - seebeck coefficient , materials science , degenerate semiconductor , thermoelectric effect , electrical resistivity and conductivity , ellipsometry , condensed matter physics , epitaxy , doping , thin film , oxygen , effective mass (spring–mass system) , drude model , analytical chemistry (journal) , thermal conductivity , chemistry , optoelectronics , nanotechnology , thermodynamics , physics , organic chemistry , quantum mechanics , layer (electronics) , chromatography , composite material
A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300–1000 K) thermoelectricproperties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300–2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor

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