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Inertness and degradation of (0001) surface of Bi2Se3 topological insulator
Author(s) -
V. A. Golyashov,
К. А. Кох,
S. V. Makarenko,
Konstantin Romanyuk,
Igor P. Prosvirin,
А. В. Калинкин,
О. Е. Терещенко,
A. S. Kozhukhov,
D. V. Sheglov,
С. В. Еремеев,
С. Д. Борисова,
Е. В. Чулков
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4767458
Subject(s) - bismuth , x ray photoelectron spectroscopy , scanning tunneling microscope , topological insulator , ab initio quantum chemistry methods , adsorption , vacancy defect , ab initio , density functional theory , single crystal , materials science , crystallography , chemistry , computational chemistry , nanotechnology , chemical engineering , molecule , condensed matter physics , metallurgy , physics , organic chemistry , engineering
et al.Inertness of the cleaved (0001) surface of theBi 2 Se 3 single crystal, grown by modified Bridgman method, to oxidation has been demonstrated by X-ray photoelectron spectroscopy, scanning tunneling microscopy, and by ab initio DFT calculations. No intrinsic bismuth and selenium oxides are formed on the low-defect, atomically flatBi 2 Se 3 (0001)−(1×1) surface after a long-time air exposure. The inertness ofBi 2 Se 3 (0001) toO 2 andNO 2 , as well as bismuth-oxygen bonding formation under molecular adsorption in the Se vacancy was supported by DFT calculations. © 2012 American Institute of Physics.The present work was partly supported by the Russian Foundation for Basic Research (12-02-00226) and Russian Science Support Foundation. We acknowledge partial support by the University of the Basque Country (Project GVUPV/EHU, Grant IT-366-07) and Ministerio de Ciencia e Inovación (Grant FIS2010-19609-C02-00).Peer Reviewe

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