Open AccessErratum: “Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures” [Appl. Phys. Lett. 101, 091601 (2012)]
Author(s) -
B. Mazumder,
Man Hoi Wong,
Christophe A. Hurni,
Jack Zhang,
Umesh K. Mishra,
James S. Speck
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4766344
Subject(s) - polar , heterojunction , wide bandgap semiconductor , materials science , optoelectronics , condensed matter physics , nanotechnology , physics , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom