Open AccessGrowth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As
Author(s) -
Pham Nam Hai,
Lê Đức Anh,
Shyam Mohan,
T. Tamegai,
M. Kodzuka,
T. Ohkubo,
K. Hono,
Masaaki Tanaka
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4764947
Subject(s) - ferromagnetism , molecular beam epitaxy , magnetic semiconductor , doping , materials science , condensed matter physics , electron , semiconductor , impurity , diode , spin (aerodynamics) , beryllium , optoelectronics , chemistry , epitaxy , nanotechnology , physics , organic chemistry , layer (electronics) , quantum mechanics , thermodynamics
We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.
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