Leakage current asymmetry and resistive switching behavior of SrTiO3 | Zendy

Shahin A. Mojarad | Zendy; Jonathan P. Goss | Zendy; K.S.K. Kwa | Zendy; Zhiyong Zhou | Zendy; Raied Al-hamadany | Zendy; Daniel J. R. Appleby | Zendy; Nikhil Po | Zendy; A.G. O’Neill | Zendy

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Leakage current asymmetry and resistive switching behavior of SrTiO3

Author(s) -

Shahin A. Mojarad,

Jonathan P. Goss,

K.S.K. Kwa,

Zhiyong Zhou,

Raied Al-hamadany,

Daniel J. R. Appleby,

Nikhil Po,

A.G. O’Neill

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4764544

Subject(s) - asymmetry , materials science , condensed matter physics , resistive touchscreen , capacitor , electrode , redistribution (election) , optoelectronics , voltage , chemistry , electrical engineering , physics , quantum mechanics , politics , political science , law , engineering

The resistive switching characteristics of SrTiO3 metal-insulator-metal capacitors are investigated. The current-density versus voltage (J-V) characteristics show asymmetry at all temperatures examined, with resistive switching behavior observed at elevated temperatures. The asymmetry is explained by the relative lack of electron traps at one electrode, which is determined from the symmetric J-V curve obtained at room temperature due to the redistribution of the dominant electrical defects in the film. We present evidence for the model of resistive switching originating from defect diffusion (possibly oxygen vacancies) at high temperatures.

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