Open AccessThe addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains
Author(s) -
Thibaud Denneulin,
David Cooper,
JeanMichel Hartmann,
JeanLuc Rouvière
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4764045
Subject(s) - materials science , transistor , strain (injury) , optoelectronics , field effect transistor , mosfet , strain engineering , semiconductor , stress (linguistics) , silicon , electrical engineering , voltage , medicine , linguistics , philosophy , engineering
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