Open AccessMonolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
Author(s) -
L. Desplanque,
Salim El Kazzi,
Christophe Coi,
S. Ziegler,
Bernardette Kunert,
Andreas Beyer,
Kerstin Volz,
W. Stolz,
Y. Wang,
P. Ruterana,
X. Wallart
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4758292
Subject(s) - heterojunction , materials science , electron mobility , epitaxy , optoelectronics , silicon , substrate (aquarium) , layer (electronics) , band gap , nanotechnology , oceanography , geology
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