Open AccessResponse to “Comment on ‘Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses’” [J. Appl. Phys. 112, 076101 (2012)]
Author(s) -
Gary W. Paterson,
A. R. Long
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4756043
Subject(s) - admittance , condensed matter physics , semiconductor , interface (matter) , oxide , state (computer science) , degree (music) , metal , materials science , chemistry , analytical chemistry (journal) , thermodynamics , physics , optoelectronics , quantum mechanics , mathematics , metallurgy , electrical impedance , acoustics , pulmonary surfactant , gibbs isotherm , algorithm , chromatography
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom