z-logo
open-access-imgOpen Access
Magnetocapacitance of an electrically tunable silicene device
Author(s) -
M. Tahir,
Udo Schwingenschlögl
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4754711
Subject(s) - silicene , magnetocapacitance , condensed matter physics , electric field , magnetic field , perpendicular , graphene , materials science , physics , optoelectronics , nanotechnology , multiferroics , ferroelectricity , quantum mechanics , geometry , mathematics , dielectric
Despite their structural similarity, the electronic properties of silicene are fundamentally different from those of well-known graphene due to the strong intrinsic spin orbit interaction and buckled structure of silicene. We address the magnetocapacitance of spin and valley polarized silicene in an external perpendicular magnetic field to clarify the interplay of the spin orbit interaction and the perpendicular electric field. We find that the band gap is electrically tunable and show that the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high magnetic field

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom