In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures | Zendy

Sebastian Brückner | Zendy; Oliver Supplie | Zendy; Enrique Barrigón | Zendy; Anja Dobrich | Zendy; Johannes Luczak | Zendy; Claas Löbbel | Zendy; Ignacio ReyStolle | Zendy; Peter Kleinschmidt | Zendy; Henning Döscher | Zendy; Thomas Hannappel | Zendy

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In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures

Author(s) -

Sebastian Brückner,

Oliver Supplie,

Enrique Barrigón,

Anja Dobrich,

Johannes Luczak,

Claas Löbbel,

Ignacio ReyStolle,

Peter Kleinschmidt,

Henning Döscher,

Thomas Hannappel

Publication year - 2012

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.4753827

Subject(s) - vicinal , materials science , annealing (glass) , oxide , fourier transform infrared spectroscopy , hydrogen , silicon , spectroscopy , in situ , analytical chemistry (journal) , infrared spectroscopy , optoelectronics , optics , chemistry , physics , organic chemistry , chromatography , quantum mechanics , metallurgy , composite material

Si(100) and Ge(100) substrates essential for subsequent III-V integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. Reflectance anisotropy spectroscopy (RAS) enabled us to distinguish characteristic configurations of vicinal Si(100) in situ: covered with oxide, cleaned by thermal removing in H2, and terminated with monohydrides when cooling in H2 ambient. RAS measurements during cooling in H2 ambient after the oxide removal process revealed a transition from the clean to the monohydride terminated Si(100) surface dependent on process temperature. For vicinal Ge(100) we observed a characteristic RA spectrum after annealing and cooling in H2 ambient. According to results from X-ray photo electron spectroscopy and Fourier-transform infrared spectroscopy the spectrum corresponds to the monohydride terminated Ge(100) surface

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