The effect of concentration on the performance of quantum dot intermediate-band solar cells | Zendy

Yoshitaka Okada | Zendy; Katsuhisa Yoshida | Zendy; Yasushi Shoji | Zendy; Akio Ogura | Zendy; P.G. Linares | Zendy; Antonio Martı́ | Zendy; A. Ĺuque | Zendy

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The effect of concentration on the performance of quantum dot intermediate-band solar cells

Author(s) -

Yoshitaka Okada,

Katsuhisa Yoshida,

Yasushi Shoji,

Akio Ogura,

P.G. Linares,

Antonio Martı́,

A. Ĺuque

Publication year - 2012

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.4753822

Subject(s) - photocurrent , quantum dot , superlattice , optoelectronics , materials science , molecular beam epitaxy , absorption (acoustics) , band gap , doping , solar cell , multiple exciton generation , photon , photoconductivity , layer (electronics) , nanotechnology , optics , physics , epitaxy , composite material

Implementation of a high-efficiency quantum dot intermediate-band solar cell (QD-IBSC) must accompany a sufficient photocurrent generation via IB states. The demonstration of a QD-IBSC is presently undergoing two stages. The first is to develop a technology to fabricate high-density QD stacks or a superlattice of low defect density placed within the active region of a p-i-n SC, and the second is to realize half-filled IB states to maximize the photocurrent generation by two-step absorption of sub-bandgap photons. For this, we have investigated the effect of light concentration on the characteristics of QDSCs comprised of multi-layer stacks of self-organized InAs/GaNAs QDs grown with and without impurity doping in molecular beam epitaxy

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