Open AccessOptimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology
Author(s) -
Elisa GarcíaTabarés,
Diego Martín,
Iván García,
Jean François Lelièvre,
Ignacio ReyStolle
Publication year - 2012
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.4753821
Subject(s) - materials science , passivation , silicon , optoelectronics , photovoltaic system , solar cell , metalorganic vapour phase epitaxy , crystalline silicon , common emitter , engineering physics , quantum dot solar cell , monocrystalline silicon , layer (electronics) , nanotechnology , electrical engineering , epitaxy , engineering
Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties
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