Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots | Zendy

Rami T. ElAfandy | Zendy; Tien Khee Ng | Zendy; Dongkyu Cha | Zendy; Meng Zhang | Zendy; P. Bhattacharya | Zendy; Boon S. Ooi | Zendy

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Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Author(s) -

Rami T. ElAfandy,

Tien Khee Ng,

Dongkyu Cha,

Meng Zhang,

P. Bhattacharya,

Boon S. Ooi

Publication year - 2012

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4751434

Subject(s) - quantum dot , indium , photoluminescence , materials science , optoelectronics , indium gallium nitride , wetting layer , gallium , quenching (fluorescence) , gallium nitride , nanotechnology , optics , layer (electronics) , physics , fluorescence , metallurgy

Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics

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