Open AccessUnipolar behavior of asymmetrically doped strained Si0.5Ge0.5 tunneling field-effect transistors
Author(s) -
Matthias Schmidt,
Renato Amaral Minamisawa,
S. Richter,
A. Schäfer,
Dan Buca,
JeanMichel Hartmann,
QingTai Zhao,
S. Mantl
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4751356
Subject(s) - ambipolar diffusion , dopant , quantum tunnelling , materials science , doping , field effect transistor , optoelectronics , ion implantation , transistor , condensed matter physics , ion , chemistry , plasma , electrical engineering , voltage , physics , organic chemistry , quantum mechanics , engineering
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