Overall performance evaluation using an equivalent circuit model for radio-frequency single-electron transistors | Zendy

Saxon Liou | Zendy; WeiChen Chien | Zendy; Watson Kuo | Zendy

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Overall performance evaluation using an equivalent circuit model for radio-frequency single-electron transistors

Author(s) -

Saxon Liou,

WeiChen Chien,

Watson Kuo

Publication year - 2012

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4751251

Subject(s) - radio frequency , amplitude , equivalent circuit , transistor , sensitivity (control systems) , conductance , reflection (computer programming) , phase (matter) , resonance (particle physics) , rlc circuit , low frequency , optoelectronics , materials science , physics , electrical engineering , voltage , atomic physics , optics , capacitor , electronic engineering , condensed matter physics , computer science , engineering , programming language , astronomy , quantum mechanics

Charge sensitivities of a radio-frequency single-electron transistor (RF-SET) by using amplitude (AD) and phase-shift detection (PSD) of the reflected RF signals were experimentally studied. It was found that AD is most sensitive at the resonant frequency while PSD is most sensitive at a frequency slightly off the resonance. The best PSD sensitivity is better than the best AD one when the quality factor of a tank circuit is higher than 10; the higher Q-value is, the superior PSD. The maximal change in reflection amplitude and phase-shift were found proportional to the SET conductance change. The above experimental findings were confirmed by the calculation based on an equivalent circuit model

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