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Electron spin resonance signature of the oxygen vacancy in HfO2
Author(s) -
Roland Gillen,
John Robertson,
Stewart J. Clark
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4751110
Subject(s) - polaron , condensed matter physics , vacancy defect , electron paramagnetic resonance , electron , delocalized electron , spin (aerodynamics) , atomic physics , fermi level , chemistry , materials science , physics , nuclear magnetic resonance , quantum mechanics , thermodynamics , organic chemistry
The oxygen vacancy has been inferred to be the critical defect in HfO2, responsible for charge trapping, gate threshold voltage instability, and Fermi level pinning for high work function gates, but it has never been conclusively identified. Here, the electron spin resonance g tensor parameters of the oxygen vacancy are calculated, using methods that do not over-estimate the delocalization of the defect wave function, to be gxx = 1.918, gyy = 1.926, gzz = 1.944, and are consistent with an observed spectrum. The defect undergoes a symmetry lowering polaron distortion to be localized mainly on a single adjacent Hf ion

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