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We have epitaxially deposited ferroelectric Ba₀.₇Sr₀.₃TiO₃ (BST) thin films grown on GaAs substrate via SrTiO₃ buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from −190 to 90 °C, indicating Curie temperature of the BST film to be around 52 °C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is found to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device applicationDepartment of Applied PhysicsAuthor name used in this publication: Jianhua Ha

In-plane dielectric properties of epitaxial Ba0.7Sr0.3TiO3 thin films grown on GaAs for tunable device application