Open AccessNon-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy
Author(s) -
M. Hong,
Chun-Wei Chang,
Dung-Ching Perng,
Kuan-Ching Lee,
Shiu-Ko Jang Jian,
Wei-Fan Lee,
Yen Chuang,
Yu-Ta Fan,
Woo Sik Yoo
Publication year - 2012
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4748294
Subject(s) - raman spectroscopy , materials science , silicon , annealing (glass) , analytical chemistry (journal) , epitaxy , doping , wafer , secondary ion mass spectroscopy , secondary ion mass spectrometry , rapid thermal processing , spectroscopy , ion , optoelectronics , nanotechnology , chemistry , optics , metallurgy , layer (electronics) , physics , organic chemistry , chromatography , quantum mechanics
B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B redistribution by thermal diffusion was observed from B-doped, thin Si1-xGex bi-layers on Si(100) wafers after rapid thermal annealing at 950°C or higher. Significant Ge and B diffusion in Si1-xGex bi-layers and Si substrates was verified by secondary ion mass spectroscopy. Pile up of B atoms at the surface and at the boundary between Si1-xGex bi-layers was observed in the early stages of thermal diffusion
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