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Oscillatory regularity of charge carrier traps energy spectra in silicon organic polymer poly(di-n-hexylsilane)
Author(s) -
A. Gumenjuk,
N. I. Ostapenko,
Yu. Ostapenko,
O. Kerita,
S. Suto,
Akira Watanabe
Publication year - 2012
Publication title -
low temperature physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.356
H-Index - 43
eISSN - 1090-6517
pISSN - 1063-777X
DOI - 10.1063/1.4746796
Subject(s) - silicon , materials science , polymer , spectral line , raman spectroscopy , charge (physics) , charge carrier , range (aeronautics) , atomic physics , energy (signal processing) , luminescence , molecular physics , physics , optoelectronics , optics , quantum mechanics , composite material
Charge carrier traps energy spectra have been investigated in silicon organic polymer poly(di-n-hexylsilane) by fractional thermally stimulated luminescence in the temperature range from 5 to 200 K. The energy spectrum of traps has been found to be discrete in nature—not quasi-continuous, as was regarded earlier. It has been established that trap energies form two characteristic series result from the vibrational quanta at 373 and 259 cm–1, respectively. It is important that these vibrational quanta coincide with the frequencies of the totally symmetric vibrational modes of silicon chain, which are active in Raman spectrum. The regularities mentioned are analyzed using the oscillatory traps model as the basis.

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