Open AccessInvestigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors
Author(s) -
SanYuan Wang,
ChiaCherng Chang,
ChunMing Chang,
Shih-Hung Chen,
F. Ren,
S. J. Pearton,
JenInn Chyi
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4745208
Subject(s) - bipolar junction transistor , common emitter , heterojunction , antimonide , heterojunction bipolar transistor , optoelectronics , materials science , indium gallium arsenide , heterostructure emitter bipolar transistor , doping , gallium arsenide , transistor , physics , voltage , quantum mechanics
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