Carrier localization in InN/InGaN multiple-quantum wells with high In-content | Zendy

S. ValduezaFelip | Zendy; Lorenzo Rigutti | Zendy; F. B. Naranjo | Zendy; P. Ruterana | Zendy; J. Mangeney | Zendy; F. H. Julien | Zendy; Miguel GonzálezHerráez | Zendy; E. Monroy | Zendy

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Carrier localization in InN/InGaN multiple-quantum wells with high In-content

Author(s) -

S. ValduezaFelip,

Lorenzo Rigutti,

F. B. Naranjo,

P. Ruterana,

J. Mangeney,

F. H. Julien,

Miguel GonzálezHerráez,

E. Monroy

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4742157

Subject(s) - photoluminescence , quantum well , materials science , wide bandgap semiconductor , optoelectronics , relaxation (psychology) , carrier lifetime , condensed matter physics , activation energy , luminescence , weak localization , optics , chemistry , physics , magnetoresistance , silicon , psychology , social psychology , laser , organic chemistry , quantum mechanics , magnetic field

We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk\udInN by means of temperature-dependent photoluminescence and pump-probe measurements at\ud1.55 lm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to\udcarrier localization at structural defects with an average localization energy of 12 meV. Carrier\udlocalization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN

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