Phase change behaviors of Zn-doped Ge2Sb2Te5 films | Zendy

Guoxiang Wang | Zendy; Qiuhua Nie | Zendy; Xiang Shen | Zendy; Rongping Wang | Zendy; Liangcai Wu | Zendy; Jing Fu | Zendy; Tiefeng Xu | Zendy; Shixun Dai | Zendy

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Phase change behaviors of Zn-doped Ge₂Sb₂Te₅ films

Author(s) -

Guoxiang Wang,

Qiuhua Nie,

Xiang Shen,

Rongping Wang,

Liangcai Wu,

Jing Fu,

Tiefeng Xu,

Shixun Dai

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4742144

Subject(s) - crystallization , materials science , doping , phase (matter) , crystallography , thermal stability , atom (system on chip) , hexagonal crystal system , phase change memory , phase change , band gap , hexagonal phase , germanium compounds , analytical chemistry (journal) , germanium , nanotechnology , chemistry , optoelectronics , thermodynamics , chromatography , physics , organic chemistry , layer (electronics) , silicon , computer science , embedded system

Zn-doped Ge2Sb2Te5 phase-change materials have been investigated for phase change memory applications. Zn15.16(Ge2Sb2Te5)84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge2Sb2Te5. The proper Zn atom added into Ge2Sb2Te5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

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