A single-electron probe for buried optically active quantum dot | Zendy

Toshihiro Nakaoka | Zendy; Kenjiro Watanabe | Zendy; Naoto Kumagai | Zendy; Yasuhiko Arakawa | Zendy

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A single-electron probe for buried optically active quantum dot

Author(s) -

Toshihiro Nakaoka,

Kenjiro Watanabe,

Naoto Kumagai,

Yasuhiko Arakawa

Publication year - 2012

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4738368

Subject(s) - quantum dot , coulomb blockade , quantum tunnelling , quantum dot laser , electron , electrode , quantum point contact , materials science , condensed matter physics , fermi level , photon , molecular physics , semiconductor , optoelectronics , physics , quantum well , optics , quantum mechanics , laser , semiconductor laser theory , transistor , voltage

We present a simple method that enables both single electron transport through a self-assembled quantum dot and photon emission from the dot. The quantum dot buried in a semiconductor matrix is electrically connected with nanogap electrodes through tunneling junctions formed by a localized diffusion of the nanogap electrode metals. Coulomb blockade stability diagrams for the optically-active dot are clearly resolved at 4.2 K. The position of the quantum dot energy levels with respect to the contact Fermi level is controlled by the kind of metal atoms diffused from the nanogap electrodes

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