Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires | Zendy

Nian Jiang | Zendy; Patrick Parkinson | Zendy; Qian Gao | Zendy; Steffen Breuer | Zendy; Hark Hoe Tan | Zendy; J. WongLeung | Zendy; C. Jagadish | Zendy

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Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires

Author(s) -

Nian Jiang,

Patrick Parkinson,

Qian Gao,

Steffen Breuer,

Hark Hoe Tan,

J. WongLeung,

C. Jagadish

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4735002

Subject(s) - nanowire , heterojunction , photoluminescence , x ray absorption spectroscopy , chemical vapor deposition , materials science , carrier lifetime , molecular beam epitaxy , optoelectronics , shell (structure) , gallium arsenide , epitaxy , nanotechnology , silicon , absorption spectroscopy , optics , composite material , physics , layer (electronics)

The Australian Research Council is acknowledged for the financial support and the authors acknowledge the use of facilities in the Centre for Advanced Microscopy (AMMRF node) and the ACT node of the Australian National Fabrication Facility for this work.

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