Open AccessConfinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices
Author(s) -
N. Cherkashin,
A. Claverie,
D. Sotta,
Jean-Marc Bethoux,
Luciana Capello,
Oleg Kochuk
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4733619
Subject(s) - superlattice , materials science , annealing (glass) , vacancy defect , transmission electron microscopy , wide bandgap semiconductor , condensed matter physics , optoelectronics , nanotechnology , metallurgy , physics
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