Open AccessEfficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers
Author(s) -
N. Hossain,
S. R. Jin,
S. Liebich,
M. Zimprich,
Kerstin Volz,
Bernardette Kunert,
W. Stolz,
Stephen J. Sweeney
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4733312
Subject(s) - spontaneous emission , quantum well , recombination , hydrostatic pressure , materials science , laser , wide bandgap semiconductor , limiting , quantum efficiency , nitride , atomic physics , optoelectronics , chemistry , optics , thermodynamics , physics , nanotechnology , biochemistry , layer (electronics) , gene , mechanical engineering , engineering
We report on the carrier recombination mechanisms in dilute nitride Ga(NAsP)/GaP quantum well lasers. Spontaneous emission measurements show that defect-related recombination in the devices is less significant compared with other GaAs-based dilute nitride lasers. From temperature dependent measurements, we find that the threshold current density, Jth is dominated by non-radiative recombination process(es), which account for at least 91% of Jth at room temperature. The characteristic temperature, T0 (T1) is measured to be ∼104 K (∼99 K) around 200 K, which drops to ∼58 K ( ∼37 K) around room temperature. Hydrostatic pressure measurements reveal a strong increase of threshold current with increasing pressure. This implies that current leakage dominates carrier recombination which is also responsible for their low T0 and T1 values at room temperature.
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