Beating of magnetic oscillations in a graphene device probed by quantum capacitance | Zendy

M. Tahir | Zendy; Udo Schwingenschlögl | Zendy

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Beating of magnetic oscillations in a graphene device probed by quantum capacitance

Author(s) -

M. Tahir,

Udo Schwingenschlögl

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4732796

Subject(s) - condensed matter physics , landau quantization , quantum capacitance , capacitance , graphene , magnetic field , physics , monolayer , quantum oscillations , silicon on insulator , shubnikov–de haas effect , materials science , optoelectronics , quantum mechanics , silicon , nanotechnology , fermi surface , superconductivity , electrode

We report the quantum capacitance of a monolayergraphene device in an external perpendicular magnetic field including the effects of Rashba spin-orbit interaction(SOI). The SOI mixes the spin up and spin down states of neighbouring Landau levels into two (unequally spaced) energy branches. In order to investigate the role of the SOI for the electronic transport, we study the density of states to probe the quantum capacitance of monolayergraphene.SOIeffects on the quantum magnetic oscillations (Shubnikov de Haas and de Hass-van Alphen) are deduced from the quantum capacitance

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