Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices
Author(s) -
Florian Lükermann,
Ü. Heinzmann,
H. Stiebig
Publication year - 2012
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4730432
Subject(s) - materials science , photocurrent , amorphous silicon , silicon , optoelectronics , photoconductivity , plasmon , absorption (acoustics) , thin film , impurity , excitation , band gap , nanoparticle , nanotechnology , crystalline silicon , chemistry , physics , organic chemistry , composite material , quantum mechanics
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