Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga0.6Fe1.4O3 thin films | Zendy

Christophe Lefèvre | Zendy; Ran Hee Shin | Zendy; Jung Hwa Lee | Zendy; Seol Hee Oh | Zendy; F. Roulland | Zendy; Alexandre Thomasson | Zendy; Emmanuel Autissier | Zendy; C. Mény | Zendy; William Jo | Zendy; N. Viart | Zendy

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Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga0.6Fe1.4O3 thin films

Author(s) -

Christophe Lefèvre,

Ran Hee Shin,

Jung Hwa Lee,

Seol Hee Oh,

F. Roulland,

Alexandre Thomasson,

Emmanuel Autissier,

C. Mény,

William Jo,

N. Viart

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4729872

Subject(s) - materials science , doping , pulsed laser deposition , thin film , magnetization , condensed matter physics , leakage (economics) , charge carrier , current density , optoelectronics , nanotechnology , magnetic field , physics , quantum mechanics , economics , macroeconomics

Ga0.6Fe1.4O3 is predicted to be magnetoelectric with non zero magnetization at room temperature. However, in thin films, electric properties are overshadowed by strong leakage currents. In this Letter, we show that Mgdoping in Ga0.6Fe1.4O3thin filmsgrown by pulsed laser deposition allows decreasing the leakage current density by four orders of magnitude and might simultaneously allow tuning the carriers’ nature. These results suggest the possibility to develop a new class of material exhibiting room temperature magnetization, tunable transport properties, and magnetoelectric properties.

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