Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films | Zendy

Pradipta K. Nayak | Zendy; J. A. Caraveo-Frescas | Zendy; Unnat S. Bhansali | Zendy; Husam N. Alshareef | Zendy

Open Access

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Author(s) -

Pradipta K. Nayak,

J. A. Caraveo-Frescas,

Unnat S. Bhansali,

Husam N. Alshareef

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4729787

Subject(s) - ferroelectricity , materials science , optoelectronics , transistor , doping , field effect transistor , thin film , thin film transistor , lithium (medication) , non volatile memory , threshold voltage , nanotechnology , voltage , electrical engineering , layer (electronics) , dielectric , medicine , endocrinology , engineering

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications

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