Open AccessResponse to “Comment on ‘Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited’” [J. Appl. Phys. 111, 116102 (2012)]
Author(s) -
Jan Vanhellemont
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4729525
Subject(s) - crystallographic defect , silicon , condensed matter physics , materials science , point (geometry) , crystallography , chemistry , physics , optoelectronics , mathematics , geometry
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