Afterpulse-like noise limits dynamic range in time-gated applications of thin-junction silicon single-photon avalanche diode | Zendy

Alberto Dalla Mora | Zendy; Davide Contini | Zendy; Antonio Pifferi | Zendy; Rinaldo Cubeddu | Zendy; Alberto Tosi | Zendy; Franco Zappa | Zendy

Open Access

Afterpulse-like noise limits dynamic range in time-gated applications of thin-junction silicon single-photon avalanche diode

Author(s) -

Alberto Dalla Mora,

Davide Contini,

Antonio Pifferi,

Rinaldo Cubeddu,

Alberto Tosi,

Franco Zappa

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4729389

Subject(s) - avalanche diode , avalanche breakdown , noise (video) , single photon avalanche diode , optoelectronics , avalanche photodiode , diode , materials science , breakdown voltage , detector , dynamic range , physics , silicon , voltage , optics , photon , quantum mechanics , artificial intelligence , computer science , image (mathematics)

We describe a source of noise in thin-junction silicon single-photon avalanche diode arising after strong illumination either during the ON (voltage above breakdown) or the OFF (voltage below breakdown) time. It increases the background noise with respect to primary dark count rate similarly to the afterpulsing process, but it is not related to a previous detector ignition. Theamount of noise is linearly dependent on the power of light impinging on the detector and time constants are independent of the electric field. This phenomenon is the main limiting factor for the dynamic-range during time-gated measurements in condition of strong illumination

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