Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots
Author(s) -
Guillermo MuñozMatutano,
Isaac Suárez,
Josep CanetFerrer,
Benito Alén,
David Rivas Góngora,
L. Seravalli,
Giovanna Trevisi,
P. Frigeri,
Juan P. MartínezPastor
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4729315
Subject(s) - quantum dot , exciton , thermal , uncorrelated , physics , biexciton , photoluminescence , recombination , atmospheric escape , materials science , molecular physics , condensed matter physics , optoelectronics , chemistry , biochemistry , statistics , mathematics , planet , meteorology , astrophysics , gene
We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples. © 2012 American Institute of Physics.We gratefully acknowledge the financial support of the Generalitat Valenciana, Comunidad Autnoma de Madrid and the Spanish Ministry Projects Nos. PROMETEO/2009/074, S2009ESP-1503 and TEC-2008-06756-C03-03, TEC2011-29120-C05-04/01. One of the authors D. Rivas thanks the Ministry of Science for his FPI fellowship. The AFM characterization has been carried out at CIM, University of Parma, Italy.Peer Reviewe
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