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We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples. © 2012 American Institute of Physics.We gratefully acknowledge the financial support of the Generalitat Valenciana, Comunidad Autnoma de Madrid and the Spanish Ministry Projects Nos. PROMETEO/2009/074, S2009ESP-1503 and TEC-2008-06756-C03-03, TEC2011-29120-C05-04/01. One of the authors D. Rivas thanks the Ministry of Science for his FPI fellowship. The AFM characterization has been carried out at CIM, University of Parma, Italy.Peer Reviewe

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots