Open AccessDual-purpose BGaN layers on performance of nitride-based high electron mobility transistors
Author(s) -
Vinod Ravindran,
Mohamed Seghir Boucherit,
A. Soltani,
S. Gautier,
Tarik Moudakir,
Jeramy Ray Dickerson,
Paul L. Voss,
MarieAntoinette di FortePoisson,
Jean-Claude de Jaeger,
A. Ougazzaden
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4729154
Subject(s) - optoelectronics , materials science , transistor , heterojunction , wide bandgap semiconductor , electron mobility , gallium nitride , resistive touchscreen , electron , nanotechnology , electrical engineering , voltage , layer (electronics) , physics , quantum mechanics , engineering
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