Microwave plasma-assisted photoluminescence enhancement in nitrogen-doped ultrananocrystalline diamond film | Zendy

Yu Lin Liu | Zendy; Kien Wen Sun | Zendy; Yi Jie Lin | Zendy; S. C. Fong | Zendy; INan Lin | Zendy; Nyan Hwa Tai | Zendy

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Microwave plasma-assisted photoluminescence enhancement in nitrogen-doped ultrananocrystalline diamond film

Author(s) -

Yu Lin Liu,

Kien Wen Sun,

Yi Jie Lin,

S. C. Fong,

INan Lin,

Nyan Hwa Tai

Publication year - 2012

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4727743

Subject(s) - diamond , materials science , photoluminescence , doping , vacancy defect , plasma , grain boundary , conductivity , nitrogen , impurity , microwave , thermal conductivity , optoelectronics , analytical chemistry (journal) , composite material , condensed matter physics , microstructure , chemistry , physics , organic chemistry , quantum mechanics , chromatography

Optical properties and conductivity of nitrogen-doped ultrananocrystal diamond (UNCD) films were investigated following treatment with low energy microwave plasma at room temperature. The plasma also generated vacancies in UNCD films and provided heat for mobilizing the vacancies to combine with the impurities, which formed the nitrogen-vacancy defect centers. The generated color centers were distributed uniformly in the samples. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. The photoluminescence emitted by the plasma treated nitrogen-doped UNCD films was enhanced significantly compared to the untreated films

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