Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers | Zendy

Daniel Pantel | Zendy; Haidong Lu | Zendy; Silvana Goetze | Zendy; P. Werner | Zendy; Dong Jik Kim | Zendy; Alexei Gruverman | Zendy; Dietrich Hesse | Zendy; Marin Alexe | Zendy

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Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers

Author(s) -

Daniel Pantel,

Haidong Lu,

Silvana Goetze,

P. Werner,

Dong Jik Kim,

Alexei Gruverman,

Dietrich Hesse,

Marin Alexe

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4726120

Subject(s) - ferroelectricity , materials science , quantum tunnelling , piezoresponse force microscopy , polarization (electrochemistry) , tunnel junction , resistive touchscreen , condensed matter physics , optoelectronics , physics , chemistry , dielectric , electrical engineering , engineering

In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences the quantum-mechanical tunneling through the junction, resulting in tunnel electroresistance (TER). Here, we investigate tunnel electroresistance in Co/PbZr0.2Ti0.8O3/La0.7Sr0.3MnO3 tunnel junctions. The ferroelectric polarization in tunnel junctions with 1.2-1.6 nm (three to four unit cells) PbZr0.2Ti0.8O3 thickness and an area of 0.04 μm2 can be switched by about 1 V yielding a resistive ON/OFF-ratio of about 300 at 0.4 V. Combined piezoresponse force microscopy and electronic transport investigations of these junctions reveal that the transport mechanism is quantum tunneling and the resistive switching in these junctions is due only to ferroelectric switching.

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