Open AccessStructural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition
Author(s) -
F. de MoureFlores,
J.G. Quiñones-Galván,
A. Guillén-Cervantes,
J. SantoyoSalazar,
A. Hernández–Hernández,
M. de la L. Olvera,
M. ZapataTorres,
M. MeléndezLira
Publication year - 2012
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4721275
Subject(s) - materials science , cadmium telluride photovoltaics , pulsed laser deposition , substrate (aquarium) , raman spectroscopy , thin film , hexagonal phase , doping , analytical chemistry (journal) , phase (matter) , diffraction , deposition (geology) , hexagonal crystal system , optoelectronics , crystallography , optics , nanotechnology , chemistry , paleontology , oceanography , physics , organic chemistry , chromatography , sediment , geology , biology
Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity
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