High mobility of the strongly confined hole gas in AgTaO3/SrTiO3 | Zendy

Safdar Nazir | Zendy; Mousumi Upadhyay Kahaly | Zendy; Udo Schwingenschlögl | Zendy

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High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

Author(s) -

Safdar Nazir,

Mousumi Upadhyay Kahaly,

Udo Schwingenschlögl

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4719106

Subject(s) - electron mobility , heterojunction , charge carrier density , materials science , condensed matter physics , layer (electronics) , optoelectronics , chemistry , chemical physics , nanotechnology , physics , doping

A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications

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