Open AccessPublisher’s Note: “Impact of active layer design on InGaN radiative recombination coefficient and LED performance” [J. Appl. Phys. 111, 063112 (2012)]
Author(s) -
X. Li,
Serdal Okur,
F. Zhang,
V. Avrutin,
Ü. Özgür,
H. Morkoç,
S. M. Hong,
S. H. Yen,
T. C. Hsu,
A. Matulionis
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4718913
Subject(s) - radiative transfer , layer (electronics) , recombination , optoelectronics , materials science , spontaneous emission , physics , computational physics , engineering physics , chemistry , optics , nanotechnology , laser , biochemistry , gene
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